Condensed Matter > Mesoscale and Nanoscale Physics
[Submitted on 12 Mar 2024 (v1), last revised 14 Mar 2024 (this version, v2)]
Title:Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface
View PDF HTML (experimental)Abstract:We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO$_2$ interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and amplitudes. These two-level systems lead to correlated carrier number and mobility fluctuations with a range of characteristic timescales; taken together as an ensemble, they give rise to a $1/f$ power spectral trend. Such individual defect fluctuations at the Si/SiO$_2$ interface impair the performance and reliability of nanoscale semiconductor devices, and will be a significant source of noise in semiconductor-based quantum sensors and computers. The fluctuations measured here are associated with a four-fold competition of rates, including slow two-state switching on the order of seconds and, in one state, fast switching on the order of nanoseconds which is associated with energy loss.
Submission history
From: Megan Cowie [view email][v1] Tue, 12 Mar 2024 02:22:00 UTC (6,449 KB)
[v2] Thu, 14 Mar 2024 13:27:34 UTC (6,373 KB)
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