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Physics > Applied Physics

arXiv:2401.17340 (physics)
[Submitted on 30 Jan 2024]

Title:A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy

Authors:S. Fernández-Garrido, Ž. Gačević, E. Calleja
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Abstract:Indium incorporation and surface morphology of InAlN layers grown on (0001)GaN by plasma-assisted molecular beam epitaxy were investigated as a function of the impinging In flux and the substrate temperature in the 450-610$^{\circ}$C range. In incorporation was found to decrease with substrate temperature due to thermal decomposition of the growing layer, while for a given temperature it increased with the impinging In flux until stoichiometry was reached at the growth front. The InN losses during growth followed an Arrhenius behaviour characterized by an activation energy of 2.0 eV. A growth diagram highly instrumental to identify optimum growth conditions was established.
Subjects: Applied Physics (physics.app-ph); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2401.17340 [physics.app-ph]
  (or arXiv:2401.17340v1 [physics.app-ph] for this version)
  https://doi.org/10.48550/arXiv.2401.17340
Journal reference: Appl. Phys. Lett. 93, 191907 (2008)
Related DOI: https://doi.org/10.1063/1.3026541

Submission history

From: Sergio Fernández-Garrido [view email]
[v1] Tue, 30 Jan 2024 13:05:01 UTC (1,078 KB)
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