Title:DFT analysis and demonstration of enhanced clamped Electro-Optic tensor by strain engineering in PZT

Abstract:We report $\approx$400\% enhancement in PZT Pockels coefficient on DFT simulation of lattice strain due to phonon mode this http URL simulation showed a relation between the rumpling and the Pockels coefficient divergence that happens at -8\% and 25\% strain developed in PZT this http URL simulation was verified experimentally by RF sputter deposited PZT film on Pt/SiO$_2$/Si this http URL strain developed in PZT varied from -0.04\% for film annealed at 530\degree C to -0.21\% for 600\degree C annealing this http URL strain was insensitive to RF power with a value of -0.13\% for power varying between 70-130 W. Pockels coefficient enhancement was experimentally confirmed by Si Mach Zehnder interferometer loaded with PZT and probed with the co-planar this http URL enhancement of $\approx$300\% in Pockels coefficient was observed from 2-8 pm/V with strain increasing from -0.04\% to -0.21\%. To the best of our knowledge, this is the first time study and demonstration of strain engineering on Pockels coefficient of PZT using DFT simulation, film deposition, and photonic device fabrication.