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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:2304.12712 (cond-mat)
[Submitted on 25 Apr 2023 (v1), last revised 21 Aug 2023 (this version, v2)]

Title:Magnetism-induced band-edge shift as mechanism for magnetoconductance in CrPS$_4$ transistors

Authors:Fan Wu, Marco Gibertini, Kenji Watanabe, Takashi Taniguchi, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Alberto F. Morpurgo
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Abstract:Transistors realized on 2D antiferromagnetic semiconductor CrPS$_4$ exhibit large magnetoconductance, due to magnetic-field-induced changes in magnetic state. The microscopic mechanism coupling conductance and magnetic state is not understood. We identify it by analyzing the evolution of the parameters determining the transistor behavior -- carrier mobility and threshold voltage -- with temperature and magnetic field. For temperatures T near the Néel temperature $T_N$, the magnetoconductance originates from a mobility increase due to the applied magnetic field that reduces spin fluctuation induced disorder. For $T << T_N$, instead, what changes is the threshold voltage, so that increasing the field at fixed gate voltage increases the density of accumulated electrons. The phenomenon is explained by a conduction band-edge shift correctly predicted by \emph{ab-initio} calculations. Our results demonstrate that the bandstructure of CrPS$_4$ depends on its magnetic state and reveal a mechanism for magnetoconductance that had not been identified earlier.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:2304.12712 [cond-mat.mes-hall]
  (or arXiv:2304.12712v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.2304.12712
Related DOI: https://doi.org/10.1021/acs.nanolett.3c02274

Submission history

From: Nicolas Ubrig [view email]
[v1] Tue, 25 Apr 2023 10:50:26 UTC (15,257 KB)
[v2] Mon, 21 Aug 2023 15:19:45 UTC (15,560 KB)
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