Physics > Applied Physics
[Submitted on 11 Apr 2022 (v1), last revised 7 Jun 2023 (this version, v2)]
Title:On the fluctuation-dissipation of the oxide trapped charge in a MOSFET operated down to deep cryogenic temperatures
View PDFAbstract:An analysis of the oxide trapped charge noise in a MOSFET operated down to deep cryogenic temperatures is proposed. To this end, a revisited derivation of the interface trap conductance Gp and oxide trapped charge noise SQt at the SiO2/Si MOS interface is conducted under very low temperature condition, where Fermi-Dirac statistics applies. A new relation between the oxide trapped charge noise SQt and the interface trap conductance Gp is established, showing the inadequacy of the Nyquist relation at very low temperature. Finally, a new formula for the oxide trapped charge 1/f noise, going beyond the classical Boltzmann expression, is developed in terms of oxide trap density and effective temperature accounting for degenerate statistics.
Submission history
From: Gerard Ghibaudo [view email][v1] Mon, 11 Apr 2022 09:11:58 UTC (135 KB)
[v2] Wed, 7 Jun 2023 09:07:08 UTC (174 KB)
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