Title:Origin of dielectric loss at the Nb/oxide interface: Evidence for atomic two-level systems

Abstract:While several experiments claim that two-level system (TLS) defects in amorphous oxides are responsible for energy relaxation in superconducting resonators and qubits, only a few are able to provide quantitative explanation of their data in terms of the conventional noninteracting TLS model. Here several models of dielectric loss are considered to explain available experimental data of photon loss in TESLA cavities. These cavities contain a single amorphous niobium/niobium oxide interface in their interior, making them convenient testbeds for analysis of TLS parameters. It is shown that the noninteracting model does indeed yield the best fit to experimental data, provided that a one-species model with sharp modulus of electric dipole moment $p$ is assumed for electropolished cavities with a thin ($5$ nm) amorphous oxide. In contrast, a two-species model with two different $p$'s is required to explain data in anodized cavities with a thick $100$ nm oxide layer. The small variation in TLS microscopic structure is indicative of "atomic TLSs" such as Nb:O,H, realized by an atom (H) trapped in one of two locations near an O interstitial.