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Physics > Applied Physics

arXiv:2107.08412 (physics)
[Submitted on 18 Jul 2021 (v1), last revised 21 Jul 2021 (this version, v2)]

Title:Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration

Authors:Z. Gao, M. Meneghini, F. Rampazzo, M. Rzin, C. De Santi, G. Meneghesso, E. Zanoni
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Abstract:The reliability of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration was investigated by means of different stress tests. Firstly, DC and pulsed I-V characterization at room temperature are discussed, then drain step stress tests at different gate voltages are compared, afterwards, the constant stress at different bias points are discussed. Results show that the high C HEMTs showed reduced DIBL, smaller leakage current, as well as decreased electric field, leading to an improved robustness during on-state stress testing, with respect to the reference ones. Failure modes during constant voltage stress consists in a decrease of drain current and transconductance, accelerated by temperature and electric field.
Comments: ["European Union (EU)" & "Horizon 2020"]["Euratom" & Euratom research & training programme 2014-2018"][EUGANIC][EDA Contract B 1447 IAP1 GP][5G_GaN_2]
Subjects: Applied Physics (physics.app-ph)
Cite as: arXiv:2107.08412 [physics.app-ph]
  (or arXiv:2107.08412v2 [physics.app-ph] for this version)
  https://doi.org/10.48550/arXiv.2107.08412
Journal reference: Microelectronics Reliability, Volumes 100-101, 2019, 113489
Related DOI: https://doi.org/10.1016/j.microrel.2019.113489

Submission history

From: Carlo De Santi [view email]
[v1] Sun, 18 Jul 2021 10:38:15 UTC (379 KB)
[v2] Wed, 21 Jul 2021 12:07:38 UTC (438 KB)
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