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Physics > Applied Physics

arXiv:2107.08410 (physics)
[Submitted on 18 Jul 2021 (v1), last revised 30 Jul 2021 (this version, v4)]

Title:Short Term Reliability and Robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs

Authors:Zhan Gao, Matteo Meneghini, Kathia Harrouche, Riad Kabouche, Francesca Chiocchetta, Daniele Marcon, Etienne Okada, Fabiana Rampazzo, Carlo De Santi, Farid Medjdoub, Gaudenzio Meneghesso, Enrico Zanoni
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Abstract:Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD. While breakdown voltages and critical voltages scale almost linearly with LGD, failure mode remains almost unchanged in all tested devices, and consists in an increase of gate leakage, accompanied by a positive shift of threshold voltage. In off-state, electroluminescence images detect the presence of localized leakage paths which may act as preferential paths for electron trapping. Degradation does not depend on dissipated power and is preliminary attributed to hot-electron trapping, enhanced by electric fields.
Comments: ["European Union (EU)" & "Horizon 2020"]["Euratom" & Euratom research & training programme 2014-2018"][EUGANIC][EDA Contract B 1447 IAP1 GP][5G_GaN_2]
Subjects: Applied Physics (physics.app-ph)
Cite as: arXiv:2107.08410 [physics.app-ph]
  (or arXiv:2107.08410v4 [physics.app-ph] for this version)
  https://doi.org/10.48550/arXiv.2107.08410
Journal reference: Microelectronics Reliability, Volume 123, 2021, 114199
Related DOI: https://doi.org/10.1016/j.microrel.2021.114199

Submission history

From: Carlo De Santi [view email]
[v1] Sun, 18 Jul 2021 10:34:21 UTC (925 KB)
[v2] Wed, 21 Jul 2021 15:00:56 UTC (1,870 KB)
[v3] Thu, 29 Jul 2021 09:35:41 UTC (1,533 KB)
[v4] Fri, 30 Jul 2021 09:17:27 UTC (1,870 KB)
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