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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:2009.02887 (cond-mat)
[Submitted on 7 Sep 2020 (v1), last revised 7 Jan 2021 (this version, v2)]

Title:Dependency of high-speed write properties on external magnetic field in spin-orbit torque in-plane magnetoresistance devices

Authors:Yohei Shiokawa, Eiji Komura, Yugo Ishitani, Atsushi Tsumita, Keita Suda, Kosuke Hamanaka, Tomohiro Taniguchi, Tomoyuki Sasaki
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Abstract:Spin-orbit torque (SOT) magnetoresistance (MR) devices have attracted attention for use in next-generation MR devices. The SOT devices are known to exhibit different write properties based on the relative angle between the magnetization direction of the free layer and the write-current direction. However, few studies that compare the write properties of each type have been reported. In this study, we measured the external perpendicular-magnetic field dependence of the threshold write current density and the write current switching probability using two types of in-plane magnetization SOT-MR devices.
Comments: 17 pages, 5 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:2009.02887 [cond-mat.mes-hall]
  (or arXiv:2009.02887v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.2009.02887
Journal reference: Applied Physics Express 14, 013001 (2021)
Related DOI: https://doi.org/10.35848/1882-0786/abd598

Submission history

From: Yohei Shiokawa [view email]
[v1] Mon, 7 Sep 2020 04:54:48 UTC (487 KB)
[v2] Thu, 7 Jan 2021 23:50:20 UTC (502 KB)
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