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Condensed Matter > Materials Science

arXiv:2008.06356 (cond-mat)
[Submitted on 14 Aug 2020]

Title:Giant Seebeck effect across the field-induced metal-insulator transition of InAs

Authors:Alexandre Jaoui, Gabriel Seyfarth, Carl Willem Rischau, Steffen Wiedmann, Siham Benhabib, Cyril Proust, Kamran Behnia, Benoît Fauqué
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Abstract:Lightly doped III-V semiconductor InAs is a dilute metal, which can be pushed beyond its extreme quantum limit upon the application of a modest magnetic field. In this regime, a Mott-Anderson metal-insulator transition, triggered by the magnetic field, leads to a depletion of carrier concentration by more than one order of magnitude. Here, we show that this transition is accompanied by a two-hundred-fold enhancement of the Seebeck coefficient which becomes as large as 11.3mV.K$^{-1}\approx 130\frac{k_B}{e}$ at T=8K and B=29T. We find that the magnitude of this signal depends on sample dimensions and conclude that it is caused by phonon drag, resulting from a large difference between the scattering time of phonons (which are almost ballistic) and electrons (which are almost localized in the insulating state). Our results reveal a path to distinguish between possible sources of large thermoelectric response in other low density systems pushed beyond the quantum limit.
Comments: supplementary material on request
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Strongly Correlated Electrons (cond-mat.str-el)
Cite as: arXiv:2008.06356 [cond-mat.mtrl-sci]
  (or arXiv:2008.06356v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2008.06356

Submission history

From: Benoit Fauque [view email]
[v1] Fri, 14 Aug 2020 13:20:22 UTC (4,212 KB)
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