Title:Large anomalous Nernst and inverse spin-Hall effects in epitaxial thin films of Kagome semimetal Mn3Ge

Abstract:Fabrication of crystallographically well-defined thin films of topological materials is important for unraveling their mesoscale quantum properties and for device applications. Mn3Ge, an antiferromagnetic Weyl semimetal with a chiral spin texture on a Kagome lattice, is expected to have enhanced Berry curvature around Weyl nodes near the Fermi energy, leading to large anomalous Hall / Nernst effects and spin-Hall effect in transport. Using magnetron sputtering, we have grown epitaxial thin films of hexagonal D019 Mn3Ge that are highly crystalline, flat and continuous. Large anomalous Nernst and inverse spin-Hall effects are observed in thermoelectric and spin pumping devices. The anomalous Nernst coefficient in the Mn3Ge films is estimated to be 0.1 {\mu}V/K, and is comparable to that of Fe, despite Mn3Ge having a weak magnetization of ~ 0.003 {\mu}B / Mn atom. The spin mixing conductance and spin-Hall angle in Mn3Ge are estimated to be 3.5 and 7 times of those in Pt, respectively.