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Physics > Applied Physics

arXiv:2001.03055 (physics)
[Submitted on 8 Jan 2020]

Title:Effect of memory electrical switching in metal/vanadium oxide/silicon structures with VO2 films obtained by the sol-gel method

Authors:Andrei Velichko, Alexander Pergament, Vadim Putrolaynen, Olga Berezina, Genrih Stefanovich
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Abstract:Electrical switching and rectifying properties of the metal-VO2-Si structures, on both p-type and n-type silicon, with vanadium dioxide films obtained by an acetylacetonate sol-gel method, are studied. The switching effect is shown to be due to the semiconductor-to-metal phase transition (SMPT) in vanadium dioxide. The shift of the switching threshold voltage, accompanied by the memory effect, in forward bias of the p-Si-VO2 anisotype heterojunction is observed. To explain this effect, a model is proposed which suggests the existence of an additional series resistance associated with a channel at the VO2/Si interface, where a SiOx layer forms during the VO2 deposition process. This resistance is responsible for both threshold switching characteristics, and the memory effect, and the oxygen ion electromigration process is shown to underlie this effect. Potential applications of the observed phenomena, combining the effects of ReRAM and SMPT, in oxide electronics are discussed.
Comments: 12 pages, 5 figures
Subjects: Applied Physics (physics.app-ph); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2001.03055 [physics.app-ph]
  (or arXiv:2001.03055v1 [physics.app-ph] for this version)
  https://doi.org/10.48550/arXiv.2001.03055
Journal reference: Materials Science in Semiconductor Processing, Volume 29, January 2015, Pages 315-320
Related DOI: https://doi.org/10.1016/j.mssp.2014.05.042

Submission history

From: Andrei Velichko [view email]
[v1] Wed, 8 Jan 2020 10:24:01 UTC (866 KB)
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