Condensed Matter > Mesoscale and Nanoscale Physics
[Submitted on 26 Oct 2018]
Title:Modeling of Organic Metal-Insulator-Semiconductor Capacitor
View PDFAbstract:In this paper, we demonstrate the principle of operation of a metal-insulator-semiconductor (MIS) capacitor based on undoped organic semiconductor. In spite of low charge concentration within the semiconductor, this device exhibits a capacitance variation with respect to applied gate voltage $V_g$, resembling the capacitance-voltage $C$-$V$ characteristics of a traditional doped semiconductor based MIS capacitor. A physics based model is developed to derive charge concentration, surface potential $\psi_s$ and the capacitance of organic MIS capacitor. The model is validated with TCAD simulation results and is further verified with experimental results obtained from fabricated organic MIS capacitor consisting of poly(4-vinylphenol) and poly(3-hexylthiophene-2,5-diyl) as insulator and semiconductor, respectively.
Submission history
From: Prashanth Kumar Manda [view email][v1] Fri, 26 Oct 2018 16:25:59 UTC (336 KB)
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