Condensed Matter > Mesoscale and Nanoscale Physics
[Submitted on 15 Oct 2018 (v1), last revised 21 Jan 2019 (this version, v2)]
Title:Quantum transport properties of industrial $^{28}$Si/$^{28}$SiO$_2$
View PDFAbstract:We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92\%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of $1.75\times10^{11}$ cm$^{-2}$ and a peak mobility of 9800 cm$^2$/Vs are measured at a temperature of 1.7 K. The $^{28}$Si/$^{28}$SiO$_2$ interface is characterized by a roughness of $\Delta=0.4$ nm and a correlation length of $\Lambda=3.4$ nm. An upper bound for valley splitting energy of 480 $\mu$eV is estimated at an effective electric field of 9.5 MV/m. These results support the use of wafer-scale $^{28}$Si/$^{28}$SiO$_2$ as a promising material platform to manufacture industrial spin qubits.
Submission history
From: Giordano Scappucci [view email][v1] Mon, 15 Oct 2018 17:12:49 UTC (1,146 KB)
[v2] Mon, 21 Jan 2019 10:18:30 UTC (1,949 KB)
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