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Condensed Matter > Materials Science

arXiv:1810.00249 (cond-mat)
[Submitted on 29 Sep 2018]

Title:Perpendicular magnetic anisotropy in bulk and thin-film CuMnAs for antiferromagnetic memory applications

Authors:I. A. Zhuravlev, A. Adhikari, K. D. Belashchenko
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Abstract:CuMnAs with perpendicular magnetic anisotropy is proposed as an active material for antiferromagnetic memory. Information can be stored in the antiferromagnetic domain state, while writing and readout can rely on the existence of the surface magnetization. It is predicted, based on first-principles calculations, that easy-axis anisotropy can be achieved in bulk CuMnAs by substituting a few percent of As atoms by Ge, Si, Al, or B. This effect is attributed to the changing occupation of certain electronic bands near the Fermi level induced by the hole doping. The calculated temperature dependence of the magnetic anisotropy does not exhibit any anomalies. Thin CuMnAs(001) films are also predicted to have perpendicular magnetic anisotropy.
Comments: 5 pages, 8 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1810.00249 [cond-mat.mtrl-sci]
  (or arXiv:1810.00249v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1810.00249
Journal reference: Appl. Phys. Lett. 113, 162404 (2018)
Related DOI: https://doi.org/10.1063/1.5048207

Submission history

From: Kirill Belashchenko [view email]
[v1] Sat, 29 Sep 2018 18:18:28 UTC (1,744 KB)
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