Title:Prediction of Schottky Barriers at Electrified Junctions

Abstract:We consider the electronic barriers that develop at the surface of a semiconductor connected to an electrode or immersed in an electrolyte. These barriers govern the current-rectifying ability of photodiodes and the light-harvesting efficiency of photoelectrodes. A model that accounts for the alignment of the donor and acceptor levels across the junction enables us to predict the heights of the barriers as a function of the donor--acceptor offsets, including the effects of charge trapping and Fermi-level pinning. This model provides a first-principles basis to previous empirical descriptions of semiconducting junctions under bias, with far-reaching implications for the computational simulation and optimization of semiconductor devices.