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Condensed Matter > Materials Science

arXiv:1804.06312 (cond-mat)
[Submitted on 17 Apr 2018]

Title:Structural characterisation of high-mobility Cd3As2 films crystallised on SrTiO3

Authors:Yusuke Nakazawa, Masaki Uchida, Shinichi Nishihaya, Markus Kriener, Yusuke Kozuka, Yasujiro Taguchi, Masashi Kawasaki
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Abstract:Cd3As2 has long been known as a high-mobility semiconductor. The recent finding of a topological semimetal state in this compound has demanded growth of epitaxial films with high crystallinity and controlled thickness. Here we report the structural characterisation of Cd3As2 films grown on SrTiO3 substrates by solid-phase epitaxy at high temperatures up to 600 C by employing optimised capping layers and substrates. The As triangular lattice is epitaxially stacked on the Ti square lattice of the (001) SrTiO3 substrate, producing (112)-oriented Cd3As2 films exhibiting high crystallinity with a rocking-curve width of 0.02 and a high electron mobility exceeding 30,000 cm2/Vs. The systematic characterisation of films annealed at various temperatures allowed us to identify two-step crystallisation processes in which out-of-plane and subsequently in-plane directions occur with increasing annealing temperature. Our findings on the high-temperature crystallisation process of Cd3As2 enable a unique approach for fabricating high-quality Cd3As2 films and elucidating quantum transport by back gating through the SrTiO3 substrate.
Comments: 10 pages, 4 figures
Subjects: Materials Science (cond-mat.mtrl-sci); Strongly Correlated Electrons (cond-mat.str-el)
Cite as: arXiv:1804.06312 [cond-mat.mtrl-sci]
  (or arXiv:1804.06312v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1804.06312
Journal reference: Scientific Reports 8, 2244 (2018)
Related DOI: https://doi.org/10.1038/s41598-018-20758-7

Submission history

From: Masaki Uchida [view email]
[v1] Tue, 17 Apr 2018 15:11:56 UTC (4,537 KB)
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