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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1804.00134 (cond-mat)
[Submitted on 31 Mar 2018]

Title:Transistor concepts based on lateral heterostructures of metallic and semiconducting phases of MoS$_2$

Authors:Damiano Marian, Elias Dib, Teresa Cusati, Enrique G. Marin, Alessandro Fortunelli, Giuseppe Iannaccone, Gianluca Fiori
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Abstract:In this paper we propose two transistor concepts based on lateral heterostructures of monolayer MoS$_2$, composed of adjacent regions of 1T (metallic) and 2H (semiconducting) phases, inspired by recent research showing the possibility to obtain such heterostructures by electron beam irradiation. The first concept, the lateral heterostructure field-effect transistor, exhibits potential of better performance with respect to the foreseen evolution of CMOS technology, both for high performance and low power applications. Performance potential has been evaluated by means of detailed multi-scale materials and device simulations. The second concept, the planar barristor, also exhibits potential competitive performance with CMOS, and an improvement of orders of magnitude in terms of the main figures of merit with respect to the recently proposed vertical barristor.
Comments: 7 pages, 8 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1804.00134 [cond-mat.mes-hall]
  (or arXiv:1804.00134v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1804.00134
Journal reference: Phys. Rev. Applied 8, 054047 (2017)
Related DOI: https://doi.org/10.1103/PhysRevApplied.8.054047

Submission history

From: Damiano Marian Dr [view email]
[v1] Sat, 31 Mar 2018 08:22:27 UTC (1,623 KB)
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