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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1803.08187 (cond-mat)
[Submitted on 22 Mar 2018 (v1), last revised 15 Aug 2019 (this version, v3)]

Title:Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices

Authors:Y. Fujita, M. Yamada, M. Tsukahara, T. Naito, S. Yamada, S. Oki, K. Sawano, K. Hamaya
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Abstract:We find extraordinary behavior of the local two-terminal spin accumulation signals in ferromagnet (FM)/semiconductor (SC) lateral spin-valve devices. With respect to the bias voltage applied between two FM/SC Schottky tunnel contacts, the local spin-accumulation signal can show nonmonotonic variations, including a sign inversion. A part of the nonmonotonic features can be understood qualitatively by considering the rapid reduction in the spin polarization of the FM/SC interfaces with increasing bias voltage. In addition to the sign inversion of the FM/SC interface spin polarization, the influence of the spin-drift effect in the SC layer and the nonlinear electrical spin conversion at a biased FM/SC contact are discussed.
Comments: 10 pages, 7 figures, supplementary material
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1803.08187 [cond-mat.mes-hall]
  (or arXiv:1803.08187v3 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1803.08187
Journal reference: Phys. Rev. B 100, 024431 (2019)
Related DOI: https://doi.org/10.1103/PhysRevB.100.024431

Submission history

From: Kohei Hamaya [view email]
[v1] Thu, 22 Mar 2018 00:48:39 UTC (3,206 KB)
[v2] Sun, 17 Jun 2018 02:42:50 UTC (3,948 KB)
[v3] Thu, 15 Aug 2019 05:17:25 UTC (3,335 KB)
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