Title:Single-shot readout of hole spins in Ge

Abstract:Spin-based qubit systems have been in the focus of intense research in the past 15 years, showing continuous improvement in the coherence times and quality factor, the ratio between the qubit coherence and manipulation time. One of the requirements for the realization of any type of qubit is a readout mechanism with high fidelity. For spin 1/2 qubits in single quantum dot devices this is realized by means of spin to charge conversion. This technique was introduced in 2004 for electrons in GaAs. Later on, a similar scheme was used in order to measure the spin relaxation times for electrons in Si. Here we demonstrate for the first time single-shot spin readout measurements for holes. The holes are confined in Ge hut wire quantum dots. Due to the strong spin orbit coupling, which in general leads to shorter relaxation times, we integrated the charge sensor into a radio-frequency reflectometry setup. Such a setup allows high bandwidths and the extraction of hole spin relaxation times which were measured to be about 90 $\mu$s at 500mT. This result, together with the recently demonstrated spin resonance measurements of holes in Ge, underline the potential of this material system for the realization of electrically controlled hole spin qubits.