Title:Anomalous Hall conductivity and electronic structures of Si-substituted Mn$_{2}$CoAl epitaxial films

Abstract:We study anomalous Hall conductivity (AHC) and electronic band structures of Si-substituted Mn$_{2}$CoAl (Mn$_{2}$CoAl$_{1-x}$Si$_{x}$). First-principles calculations reveal that the electronic band structure is like a spin-gapless system even after substituting a quaternary element of Si for Al up to $x = $0.2 in Mn$_{2}$CoAl$_{1-x}$Si$_{x}$. By using molecular beam epitaxy (MBE) techniques, Mn$_{2}$CoAl$_{1-x}$Si$_{x}$ epitaxial films can be grown, leading to the systematic control of $x$ up to $x =$ 0.3. Note that a very small AHC of $\sim$ 1.1 S/cm is obtained for $x =$ 0.225 and the sign of AHC is changed from positive to negative at around $x =$ 0.25. We discuss the origin of the sign reversal of AHC on the basis of the Fermi level shift in the experimentally obtained MCA.