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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1710.10743 (cond-mat)
[Submitted on 30 Oct 2017]

Title:Tunneling Devices with Perpendicular Magnetic Anisotropy Electrodes on Atomically Thin van der Waals Heterostructures

Authors:H. Idzuchi, T. Taniguchi, K. Watanabe, P. Kim
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Abstract:We report the fabrication of perpendicular ferromagnetic electrodes for tunneling devices consist of van der Waals heterostructure. We found MgO/Co/Pt films on Hexagonal BN shows perpendicular magnetic anisotropy (PMA) with the easy axis perpendicular to the substrate. Vacuum annealing enhances the perpendicular anisotropy. The easy axis along the perpendicular direction persists up to room temperature with the Pt layer thickness ranges from 1.5 to 5 nm. We employed the PMA electrodes to construct tunneling devices on graphene and monolayer WSe2, where spin injection characteristics and field effect transistor behavior were demonstrated without strong Schottky barrier formation.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1710.10743 [cond-mat.mes-hall]
  (or arXiv:1710.10743v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1710.10743

Submission history

From: Hiroshi Idzuchi [view email]
[v1] Mon, 30 Oct 2017 02:14:06 UTC (750 KB)
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