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Physics > Chemical Physics

arXiv:1701.00442 (physics)
[Submitted on 2 Dec 2016]

Title:Morphological Aspects of Porous Silicon Prepared by Photoelectrochemical Etching

Authors:Oday A. Al-Owaedi, Sabah, M. Ali
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Abstract:In this work the effects of coherent radiation (Laser) and incoherent radiation (Halogen lamp) during the electrochemical etching process on the structural characteristics of n-type PSi samples were investigated. The porosity values were measured by depending on the microstructure analyses and Gravimetric measurements. Surface morphology, layer thickness, pore diameter, pore shape, wall thickness and etching rate were studied by depending on Scanning electron-microscopic (SEM) images
Subjects: Chemical Physics (physics.chem-ph)
Cite as: arXiv:1701.00442 [physics.chem-ph]
  (or arXiv:1701.00442v1 [physics.chem-ph] for this version)
  https://doi.org/10.48550/arXiv.1701.00442
Journal reference: Al-Mustansiriya J. Sci. 2007, 18, 4, 58

Submission history

From: Oday Al-Owaedi [view email]
[v1] Fri, 2 Dec 2016 23:03:52 UTC (876 KB)
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