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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1512.03369v1 (cond-mat)
[Submitted on 10 Dec 2015 (this version), latest version 31 Dec 2015 (v3)]

Title:Hopping conductivity and insulator-metal transition in films of touching semiconductor nanocrystals

Authors:Han Fu, K. V. Reich, B. I. Shklovskii
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Abstract:This paper is focused on the the variable-range hopping of electrons in semiconductor nanocrystal (NC) films below the critical doping concentration $n_c$ at which the insulator-metal transition occurs. The hopping conductivity $\sigma$ is described by the Efros-Shklovskii law as $\sigma=\sigma_0 \exp[-(T_{ES}/T)^{1/2}]$ where $T_{ES}\propto \xi^{-1}$ and $\xi$ is the localization length of electrons. We study how the localization length $\xi(n)$ grows with the doping concentration $n$ in the film of touching NCs. This allows us to find the critical concentration $n_c$. Films with different kinds of contacts between neighboring NCs are discussed.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1512.03369 [cond-mat.mes-hall]
  (or arXiv:1512.03369v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1512.03369

Submission history

From: Han Fu [view email]
[v1] Thu, 10 Dec 2015 19:14:39 UTC (5,224 KB)
[v2] Mon, 14 Dec 2015 18:59:02 UTC (5,224 KB)
[v3] Thu, 31 Dec 2015 19:04:19 UTC (3,014 KB)
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