Condensed Matter > Mesoscale and Nanoscale Physics
[Submitted on 22 Oct 2015]
Title:Room-temperature operation of Si spin MOSFET with high on/off spin signal ratio
View PDFAbstract:We experimentally demonstrate a Si spin metal-oxide-semiconductor field-effect transistor (MOSFET) that exhibits a high on/off ratio of source-drain current and spin signals at room temperature. The spin channel is non-degenerate n-type Si, and an effective application of gate voltage in the back-gated structure allows the spin MOSFET operation. This achievement can pave the way to practical use of the Si spin MOSFET.
Submission history
From: Masashi Shiraishi [view email][v1] Thu, 22 Oct 2015 08:37:02 UTC (1,323 KB)
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