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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1510.03716 (cond-mat)
[Submitted on 13 Oct 2015 (v1), last revised 23 Dec 2015 (this version, v2)]

Title:Electron back scattering in CNTFETs

Authors:Igor Bejenari, Martin Claus
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Abstract:A new non-ballistic analytical model for the intrinsic channel region of MOSFET-like single-walled carbon-nanotube field-effect transistors with ohmic contacts has been developed which overcomes the limitations of existing models and extends their applicability toward high bias voltages needed for analog applications. The new model comprises an improved description of electron-phonon scattering mechanism taking into account the accumulation of electrons at the bottom of conduction subband due to back scattering by optical phonons. The model has been justified by a Boltzmann transport equation solver. The simulation results are found to be in agreement with experimental data for highly doped CNTFETs.
Comments: 6 pages, 6 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1510.03716 [cond-mat.mes-hall]
  (or arXiv:1510.03716v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1510.03716
Journal reference: IEEE Trans. Electron Devices 63, No. 3, pp. 1340-1345, March 2016
Related DOI: https://doi.org/10.1109/TED.2015.2512180

Submission history

From: Igor Bejenari [view email]
[v1] Tue, 13 Oct 2015 14:49:03 UTC (638 KB)
[v2] Wed, 23 Dec 2015 14:15:04 UTC (560 KB)
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