Title:On mechanisms of superconductivity at the single-layer FeSe/SrTiO3 interface

Abstract:Properties of the single-unit-cell-thick FeSe layers on the strontium titanate substrate (1UCFeSe/STO) are reviewed in connection with unexpectedly high temperatures for superconductivity revealed in the system. We argue that owing to specifics of the doping process the charged 1UCFeSe/STO interface comprises both the itinerant and immobile electrons. The presence of the latter increases the dielectric constant locally, weakening, thereby, coupling of the in-layer FeSe band electrons with the electric potential of longitudinal (LO) modes at the surface of bulk SrTiO3. The optical dielectric constant is treated as the model parameter. The Coulomb screening is considered in the random phase approximation in two-dimensions. The model is shown be applicable within the range of the parameters typical for most current experiments with 1UCFeSe/STO. A few estimates suggest that mechanism of the LO-phonon-mediated pairing alone cannot account for such high temperatures of the superconducting transition as currently reported for 1UCFeSe/STO. This not excludes that the pairing mediated by LO phonons can be more effective in the single-layer FeSe films on a substrate of SrTiO3 differently prepared to specially reduce the dielectric screening. Available experiments are briefly discussed. It is pointed out, that thus far no systematic data exist for the -dependence on the concentration of doped electrons.