Condensed Matter > Materials Science
[Submitted on 3 Oct 2015]
Title:High-Performance Monolayer WS2 Field-effect Transistors on High-k Dielectrics
View PDFAbstract:The combination of high-quality Al2O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities of WS2, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regime. A record high mobility of 83 cm2/Vs (337 cm2/Vs) is reached at room temperature (low temperature) for monolayer WS2. A theoretical model for electron transport is also developed.
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