Title:Weak-Antilocalization induced Enhanced Surface Conductivity and topological protection in Topological Insulator Thin films

Abstract:We report magnetotransport measurements on ternary tetradymite Topological Insulating compound Bi2Se2Te thin films deposited by pulsed laser deposition technique. The temperature dependent resistance of these thin films shows insulating ground state followed by insulator to surface metallic transition at low temperature. Hence we anticipate that the chemical potential of these thin films lie in the bulk insulating gap, a fundamental requirement of topological insulating materials for the device applications. Such a bulk insulating state is known as the topological transport regime as shown by temperature dependence of resistance. Manifestation of topological protection and surface dominated transport has been elaborately explained by weak antilocalization data and low temperature (less than 50K) down turn in resistance of these thin films. The Magnetoresistance of these thin films exhibit pronounced weak antilocalization behavior with a sharp cusp in the vicinity of zero magnetic field. Surface states have been found remarkably robust even at reasonably high temperatures (100K) exhibiting linear MR in high field regime in agreement with other reports. Our findings are crucial for the understanding of transport behavior of topological insulators and pave the way towards realizing novel device applications.