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Condensed Matter > Materials Science

arXiv:1505.06474 (cond-mat)
[Submitted on 24 May 2015 (v1), last revised 22 Jun 2015 (this version, v2)]

Title:Enhanced Seebeck effect in graphene devices by strain and doping engineering

Authors:Mai Chung Nguyen, Viet Hung Nguyen, Huy-Viet Nguyen, Jerome Saint-Martin, Philippe Dollfus
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Abstract:In this work, we investigate the possibility of enhancing the thermoelectric power (Seebeck coefficient) in graphene devices by strain and doping engineering. While a local strain can result in the misalignment of Dirac cones of different graphene sections in the k-space, doping engineering leads to their displacement in energy. By combining these two effects, we demonstrate that a conduction gap as large as a few hundreds meV can be achieved and hence the enhanced Seebeck coefficient can reach a value higher than 1.4 mV/K in graphene doped heterojunctions with a locally strained area. Such hetero-channels appear to be very promising for enlarging the applications of graphene devices as in strain and thermal sensors.
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1505.06474 [cond-mat.mtrl-sci]
  (or arXiv:1505.06474v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1505.06474
Journal reference: Physica E 73 (2015) 207-212
Related DOI: https://doi.org/10.1016/j.physe.2015.05.020

Submission history

From: Viet Hung Nguyen [view email]
[v1] Sun, 24 May 2015 20:17:28 UTC (468 KB)
[v2] Mon, 22 Jun 2015 19:33:51 UTC (468 KB)
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