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Physics > Instrumentation and Detectors

arXiv:1505.00852 (physics)
[Submitted on 5 May 2015]

Title:The effect of heavy metal in CMOS on neutron induced single event upset simulated with Geant4

Authors:Huan Zhang, Si-guang Wang, Wei Chen, Shan-chao Yang
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Abstract:Local metal interconnection is widely used in modern complementary metal oxide semiconductor (CMOS) technology. The most frequently used local materials are some heavy metals, such as tungsten (W) or copper (Cu). It's well known that single event upset (SEU) could occur in a CMOS under neutron exposure. In this paper the rectangular parallelepiped (RPP) method is used to investigate the SEU response of a typical CMOS. SEU induced by 1$\sim$14\:MeV neutrons are simulated with Geant4 and the cross sections are calculated. The results show that only in the structure with W, secondary particle $\alpha$ is created and SEUs are generated when the energy of neutron is less than $4$\:MeV.
Comments: 5 pages, 7 figures
Subjects: Instrumentation and Detectors (physics.ins-det)
ACM classes: J.2
Cite as: arXiv:1505.00852 [physics.ins-det]
  (or arXiv:1505.00852v1 [physics.ins-det] for this version)
  https://doi.org/10.48550/arXiv.1505.00852

Submission history

From: Siguang WANG [view email]
[v1] Tue, 5 May 2015 01:07:51 UTC (773 KB)
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