Condensed Matter > Mesoscale and Nanoscale Physics
[Submitted on 28 Oct 2014 (v1), last revised 16 May 2015 (this version, v3)]
Title:Modification and Control of Topological Insulator Surface States Using Surface Disorder
View PDFAbstract:We numerically demonstrate a practical means of systematically controlling topological transport on the surface of a three dimensional topological insulator, by introducing strong disorder in a layer of depth $d$ extending inward from the surface of the topological insulator. The dependence on $d$ of the density of states, conductance, scattering time, scattering length, diffusion constant, and mean Fermi velocity are investigated. The proposed control via disorder depth $d$ requires that the disorder strength be near the large value which is necessary to drive the TI into the non-topological phase. If $d$ is patterned using masks, gates, ion implantation, etc., then integrated circuits may be fabricated. This technique will be useful for experiments and for device engineering.
Submission history
From: Vincent Sacksteder IV [view email][v1] Tue, 28 Oct 2014 13:51:38 UTC (209 KB)
[v2] Thu, 11 Dec 2014 08:51:33 UTC (210 KB)
[v3] Sat, 16 May 2015 04:03:07 UTC (974 KB)
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