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Condensed Matter > Materials Science

arXiv:1306.3008 (cond-mat)
[Submitted on 13 Jun 2013 (v1), last revised 18 Aug 2013 (this version, v2)]

Title:Large-gap quantum spin Hall insulators in tin films

Authors:Yong Xu, Binghai Yan, Hai-Jun Zhang, Jing Wang, Gang Xu, Peizhe Tang, Wenhui Duan, Shou-Cheng Zhang
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Abstract:The search of large-gap quantum spin Hall (QSH) insulators and effective approaches to tune QSH states is important for both fundamental and practical interests. Based on first-principles calculations we find two-dimensional tin films are QSH insulators with sizable bulk gaps of 0.3 eV, sufficiently large for practical applications at room temperature. These QSH states can be effectively tuned by chemical functionalization and by external strain. The mechanism for the QSH effect in this system is band inversion at the \Gamma point, similar to the case of HgTe quantum well. With surface doping of magnetic elements, the quantum anomalous Hall effect could also be realized.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1306.3008 [cond-mat.mtrl-sci]
  (or arXiv:1306.3008v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1306.3008
Journal reference: Phys. Rev. Lett. 111, 136804 (2013)
Related DOI: https://doi.org/10.1103/PhysRevLett.111.136804

Submission history

From: Yong Xu [view email]
[v1] Thu, 13 Jun 2013 02:09:28 UTC (1,138 KB)
[v2] Sun, 18 Aug 2013 04:26:47 UTC (807 KB)
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