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Condensed Matter > Materials Science

arXiv:1302.4603 (cond-mat)
[Submitted on 19 Feb 2013 (v1), last revised 25 Mar 2013 (this version, v3)]

Title:Interface Electronic Structure in a Metal/Ferroelectric Heterostructure under Applied Bias

Authors:J. E. Rault, G. Agnus, T. Maroutian, V. Pillard, Ph. Lecoeur, G. Niu, B. Vilquin, M. G. Silly, A. Bendounan, F. Sirotti, N. Barrett
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Abstract:The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using X-Ray Photoelectron Spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.
Comments: 9 pages, 8 figures. Submitted to Phys. Rev. B
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1302.4603 [cond-mat.mtrl-sci]
  (or arXiv:1302.4603v3 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1302.4603
Journal reference: Phys. Rev. B 87, 155146 (2013)
Related DOI: https://doi.org/10.1103/PhysRevB.87.155146

Submission history

From: Julien E Rault [view email]
[v1] Tue, 19 Feb 2013 13:19:09 UTC (506 KB)
[v2] Fri, 22 Mar 2013 14:49:08 UTC (508 KB)
[v3] Mon, 25 Mar 2013 15:23:22 UTC (508 KB)
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