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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1302.3942 (cond-mat)
[Submitted on 16 Feb 2013]

Title:Unipolar Vertical Transport in GaN/AlGaN/GaN Heterostructures

Authors:D. N. Nath, P. S. Park, Z. C. Yang, S. Rajan
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Abstract:In this letter, we report on unipolar vertical transport characteristics in c-plane GaN/AlGaN/GaN heterostructures. Vertical current in heterostructures with random alloy barriers was found to be independent of dislocation density and heterostructure barrier height, and significantly higher than theoretical estimates. Percolation-based transport due to random alloy fluctuations in the ternary AlGaN is suggested as the dominant transport mechanism, and confirmed through experiments showing that non-random or digital AlGaN alloys and polarization-engineered binary GaN barriers can eliminate percolation transport and reduce leakage significantly. The understanding of vertical transport and methods for effective control proposed here will greatly impact III-nitride unipolar vertical devices.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1302.3942 [cond-mat.mes-hall]
  (or arXiv:1302.3942v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1302.3942
Journal reference: Appl. Phys. Lett. 103, 022102 (2013)
Related DOI: https://doi.org/10.1063/1.4813309

Submission history

From: Digbijoy Nath [view email]
[v1] Sat, 16 Feb 2013 08:04:23 UTC (378 KB)
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