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Condensed Matter > Materials Science

arXiv:1302.3259 (cond-mat)
[Submitted on 13 Feb 2013]

Title:Interband Tunneling in 2D Crystal Semiconductors

Authors:Nan Ma, Debdeep Jena
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Abstract:Interband quantum tunneling of electrons in semiconductors is of intense recent interest as the underlying transport mechanism in tunneling field-effect transistors. Such transistors can potentially perform electronic switching with lower energy than their conventional counterparts. The recent emergence of 2-dimensional semiconducting crystals provides a new material platform for realizing such devices. In this work, we derive an analytical expression for understanding tunneling current flow in 2D crystal semiconductors. We apply the results to a range of 2D crystal semiconductors, and compare it with tunneling currents in 3D semiconductors. We also discuss the implications for tunneling devices.
Comments: 14 pages, 3 figures
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1302.3259 [cond-mat.mtrl-sci]
  (or arXiv:1302.3259v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1302.3259
Related DOI: https://doi.org/10.1063/1.4799498

Submission history

From: Nan Ma [view email]
[v1] Wed, 13 Feb 2013 22:17:49 UTC (1,288 KB)
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