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Condensed Matter > Materials Science

arXiv:1210.0624 (cond-mat)
[Submitted on 2 Oct 2012]

Title:Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon

Authors:Y. Ando, S. Yamada, K. Kasahara, K. Sawano, M. Miyao, K. Hamaya
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Abstract:We show a marked effect of the magnetic domain structure in an epitaxial CoFe contact on the spin accumulation signals in Si detected by three-terminal Hanle-effect measurements. Clear reduction in the spin accumulation signals can be seen by introducing the domain walls in the CoFe contact, caused by the lateral spin transport in the Si channel. The domain walls in the CoFe contact largely affect the spin lifetime and bias-current dependence of the spin signals. These results indicate that the estimation of the spin related properties without considering the domain structure in the contact causes non-negligible errors in the three-terminal Hanle-effect measurements.
Comments: 12 pages, 3 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1210.0624 [cond-mat.mtrl-sci]
  (or arXiv:1210.0624v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1210.0624
Related DOI: https://doi.org/10.1063/1.4769221

Submission history

From: Yuichiro Ando [view email]
[v1] Tue, 2 Oct 2012 00:57:01 UTC (586 KB)
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