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Physics > Fluid Dynamics

arXiv:1208.0201 (physics)
[Submitted on 1 Aug 2012]

Title:Electrowetting on a semiconductor

Authors:Steve Arscott, Matthieu Gaudet
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Abstract:We report electrowetting on a semiconductor using of a mercury droplet resting on a silicon surface. The effect is demonstrated using commercial n-type and p-type single-crystal (100) silicon wafers of different doping levels. The electrowetting is reversible - the voltage-dependent wetting contact angle variation of the mercury droplet is observed to depend on both the underlying semiconductor doping density and type. The electrowetting behaviour is explained by the voltage-dependent modulation of the space-charge capacitance at the metal-semiconductor junction - current-voltage and capacitance-voltage-frequency measurements indicate this to be the case. A model combining the metal-semiconductor junction capacitance and the Young-Lippmann electrowetting equation agrees well with the observations.
Comments: 14 pages, 5 figures
Subjects: Fluid Dynamics (physics.flu-dyn); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1208.0201 [physics.flu-dyn]
  (or arXiv:1208.0201v1 [physics.flu-dyn] for this version)
  https://doi.org/10.48550/arXiv.1208.0201

Submission history

From: Steve Arscott [view email]
[v1] Wed, 1 Aug 2012 13:09:35 UTC (632 KB)
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