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Condensed Matter > Materials Science

arXiv:1207.7135 (cond-mat)
[Submitted on 30 Jul 2012]

Title:Insertion of CdSe quantumdots in ZnSe nanowires : MBE growth and microstructure analysis

Authors:Martien Den Hertog (NEEL), Miryam Elouneg-Jamroz (NEEL), Edith Bellet-Amalric (INAC), Samir Bounouar (NEEL), Catherine Bougerol (NEEL), Régis André (NEEL), Yann Genuist (NEEL), Jean Philippe Poizat (NEEL), Kuntheak Kheng (SP2M), Serge Tatarenko (NEEL)
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Abstract:ZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)B buffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowires or [0001] oriented hexagonal NWs are obtained on (100) substrates while [111] oriented cubic mixed with [0001] oriented hexagonal regions are obtained on (111)B substrates. Most of the NWs are perpendicular to the surface in the last case. CdSe quantum dots were successfully incorporated in the ZnSe NWs as demonstrated by transmission electron microscopy, energy filtered TEM and high angle annular dark field scanning TEM measurements.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1207.7135 [cond-mat.mtrl-sci]
  (or arXiv:1207.7135v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1207.7135
Journal reference: Journal of Crystal Growth 323 (2010) 330-333
Related DOI: https://doi.org/10.1016/j.jcrysgro.2010.11.159

Submission history

From: Martien Den Hertog [view email] [via CCSD proxy]
[v1] Mon, 30 Jul 2012 23:39:29 UTC (1,200 KB)
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