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Condensed Matter > Materials Science

arXiv:1207.0314 (cond-mat)
[Submitted on 2 Jul 2012]

Title:Light controlled magnetoresistance and magnetic field controlled photoresistance in CoFe film deposited on BiFeO3

Authors:B. Kundys, C. Meny, M. R. J. Gibbs, V. Da Costa, M. Viret, M. Acosta, D. Colson, B. Doudin
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Abstract:We present a magnetoresistive-photoresistive device based on the interaction of a piezomagnetic CoFe thin film with a photostrictive BiFeO3 substrate that undergoes light-induced strain. The magnitude of the resistance and magnetoresistance in the CoFe film can be controlled by the wavelength of the incident light on the BiFeO3. Moreover, a light-induced decrease in anisotropic magnetoresistance is detected due to an additional magnetoelastic contribution to magnetic anisotropy of the CoFe film. This effect may find applications in photo-sensing systems, wavelength detectors and can possibly open a research development in light-controlled magnetic switching properties for next generation magnetoresistive memory devices.
Comments: 5 pages, 4 figures, journal paper
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1207.0314 [cond-mat.mtrl-sci]
  (or arXiv:1207.0314v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1207.0314
Journal reference: Appl. Phys. Lett. 100, 262411 (2012)
Related DOI: https://doi.org/10.1063/1.4731201

Submission history

From: Bohdan Kundys [view email]
[v1] Mon, 2 Jul 2012 09:22:45 UTC (1,196 KB)
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