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Condensed Matter > Materials Science

arXiv:1205.4175 (cond-mat)
[Submitted on 18 May 2012 (v1), last revised 26 Sep 2012 (this version, v3)]

Title:Electronic charge redistribution in LaAlO$_3$(001) thin films deposited at SrTiO$_3$(001) substrate: First principles analysis and the role of stoichiometry

Authors:Alexandre Sorokine, Dmitry Bocharov, Sergei Piskunov, Vyacheslavs Kashcheyevs
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Abstract:We present a comprehensive first-principles study of the electronic charge redistribution in atomically sharp LaAlO$_3$/SrTiO$_3$(001) heterointerfaces of both n- and p-types allowing for non-stoichiometric composition. Using two different computational methods within the framework of the density functional theory (linear combination of atomic orbitals and plane waves) we demonstrate that conducting properties of LaAlO$_3$/SrTiO$_3$(001) heterointerfaces strongly depend on termination of LaAlO$_3$ (001) surface. We argue that both the polar "catastrophe" and the polar distortion scenarios may be realized depending on the interface stoichiometry. Our calculations predict that heterointerfaces with a non-stoichiometrc film---either LaO-terminated n-type or AlO$_2$-terminated p-type---may exhibit the conductivity of n- or p-type, respectively, independently of LaAlO$_3$(001) film thickness.
Comments: Final version for PRB
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1205.4175 [cond-mat.mtrl-sci]
  (or arXiv:1205.4175v3 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1205.4175
Journal reference: Phys. Rev. B 86, 155410 (2012)
Related DOI: https://doi.org/10.1103/PhysRevB.86.155410

Submission history

From: Alexandre Sorokine [view email]
[v1] Fri, 18 May 2012 15:13:43 UTC (1,351 KB)
[v2] Sun, 23 Sep 2012 19:38:31 UTC (1,326 KB)
[v3] Wed, 26 Sep 2012 17:52:14 UTC (1,365 KB)
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