Title:Spin-pumping-induced spin transport in p-type Si at room temperature

Abstract:Spin transport in inorganic semiconductors provides an indispensable building block for realizing so-called beyond-CMOS technologies. Since the spin-orbit interaction in Si is essentially smaller than in GaAs, Si-based functional devices using the spin degree of freedom is recognized to be very promising with respect to spin coherence. Whereas spin transport at room temperature (RT) in n-type Si and GaAs has been reported previously, spin transport in p-type Si has not been experimentally realized3, which is an important and unexplored milestone in spintronics. Successful observations of spin transport in n- and p-type Si are significant for constructing future spin-based logic systems, such as for the charge transport in Si for operating conventional logic circuits. Here we show experimental demonstration of spin-pumping-induced spin current generation and spin transport in p-type Si at RT.