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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1104.1342 (cond-mat)
[Submitted on 7 Apr 2011 (v1), last revised 28 Apr 2011 (this version, v2)]

Title:Interplay between interferences and electron-electron interactions in epitaxial graphene

Authors:B. Jouault, B. Jabakhanji, N. Camara, W. Desrat, C. Consejo, J. Camassel
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Abstract:We separate localization and interaction effects in epitaxial graphene devices grown on the C-face of a 4H-SiC substrate by analyzing the low temperature conductivities. Weak localization and antilocalization are extracted at low magnetic fields, after elimination of a geometric magnetoresistance and subtraction of the magnetic field dependent Drude conductivity. The electron electron interaction correction is extracted at higher magnetic fields, where localization effects disappear. Both phenomena are weak but sizable and of the same order of magnitude. If compared to graphene on silicon dioxide, electron electron interaction on epitaxial graphene are not significantly reduced by the larger dielectric constant of the SiC substrate.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1104.1342 [cond-mat.mes-hall]
  (or arXiv:1104.1342v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1104.1342
Related DOI: https://doi.org/10.1103/PhysRevB.83.195417

Submission history

From: Benoit Jouault [view email]
[v1] Thu, 7 Apr 2011 14:37:06 UTC (900 KB)
[v2] Thu, 28 Apr 2011 08:55:34 UTC (900 KB)
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