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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1009.2626 (cond-mat)
[Submitted on 14 Sep 2010 (v1), last revised 10 Jun 2011 (this version, v2)]

Title:Ultrafast Carrier Recombination and Generation Rates for Plasmon Emission and Absorption in Graphene

Authors:Farhan Rana, Jared H. Strait, Haining Wang, Christina Manolatou
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Abstract:Electron-hole generation and recombination rates for plasmon emission and absorption in Graphene are presented. The recombination times of carriers due to plasmon emission have been found to be in the tens of femtoseconds to hundreds of picoseconds range. The recombination times depend sensitively on the carrier energy, carrier density, temperature, and the plasmon dispersion. Carriers near the Dirac point are found to have much longer lifetimes compared to carriers at higher energies. Plasmons in a Graphene layer on a polar substrate hybridize with the surface optical phonons and this hybridization modifies the plasmon dispersion. We also present generation and recombination rates of carriers due to plasmon emission and absorption in Graphene layers on polar substrates.
Comments: 7 Pages, 11 Figures, To appear in Phys. Rev. B (2011)
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1009.2626 [cond-mat.mes-hall]
  (or arXiv:1009.2626v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1009.2626
Journal reference: Phys. Rev. B (2011)
Related DOI: https://doi.org/10.1103/PhysRevB.84.045437

Submission history

From: Farhan Rana [view email]
[v1] Tue, 14 Sep 2010 11:00:08 UTC (149 KB)
[v2] Fri, 10 Jun 2011 20:24:58 UTC (150 KB)
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