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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1009.2156 (cond-mat)
[Submitted on 11 Sep 2010 (v1), last revised 24 Sep 2010 (this version, v2)]

Title:Anisotropic charge transport in non-polar GaN QW: polarization induced charge and interface roughness scattering

Authors:Aniruddha Konar, Tian Fang, Nan Sun, Debdeep Jena
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Abstract:Charge transport in GaN quantum well (QW) devices grown in non-polar direction has been theoretically investigated . Emergence of anisotropic line charge scattering mechanism originating as a result of anisotropic rough surface morphology in conjunction with in-plane built-in polarization has been proposed. It has shown that in-plane growth anisotropy leads to large anisotropic carrier transport at low temperatures. At high temperatures, this anisotropy in charge transport is partially washed out by strong isotropic optical phonon scattering in GaN QW.
Comments: 4 pages, 4 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1009.2156 [cond-mat.mes-hall]
  (or arXiv:1009.2156v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1009.2156
Journal reference: Phys. Rev. B 82, 193301 (2010)
Related DOI: https://doi.org/10.1103/PhysRevB.82.193301

Submission history

From: Aniruddha Konar [view email]
[v1] Sat, 11 Sep 2010 11:38:44 UTC (488 KB)
[v2] Fri, 24 Sep 2010 20:52:41 UTC (286 KB)
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