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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1009.2023 (cond-mat)
[Submitted on 10 Sep 2010]

Title:Silicon nitride gate dielectrics and bandgap engineering in graphene layers

Authors:Wenjuan Zhu, Deborah Neumayer, Vasili Perebeinos, Phaedon Avouris
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Abstract:We show that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. This insulator allowed us to study the maximum channel resistance at the Dirac (neutrality) point as a function of the strength of a perpendicular electric field in top-gated devices with different numbers of graphene layers. Using a simple model to account for surface potential variations (electron-hole puddles) near the Dirac point we estimate the field-induced band-gap or band-overlap in the different layers.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1009.2023 [cond-mat.mes-hall]
  (or arXiv:1009.2023v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1009.2023
Journal reference: Nano Letters, Vol.10, p.3572 (2010)
Related DOI: https://doi.org/10.1021/nl101832y

Submission history

From: Wenjuan Zhu [view email]
[v1] Fri, 10 Sep 2010 14:38:22 UTC (562 KB)
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