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Condensed Matter > Materials Science

arXiv:1009.0709 (cond-mat)
[Submitted on 3 Sep 2010]

Title:Metal-Insulator Transition of the LaAlO3-SrTiO3 Interface Electron System

Authors:Y. C. Liao, T. Kopp, C. Richter, A. Rosch, J. Mannhart
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Abstract:We report on a metal-insulator transition in the LaAlO3-SrTiO3 interface electron system, of which the carrier density is tuned by an electric gate field. Below a critical carrier density n_c ranging from 0.5-1.5 * 10^13/cm^2, LaAlO3-SrTiO3 interfaces, forming drain-source channels in field-effect devices are non-ohmic. The differential resistance at zero channel bias diverges within a 2% variation of the carrier density. Above n_c, the conductivity of the ohmic channels has a metal-like temperature dependence, while below n_c conductivity sets in only above a threshold electric field. For a given thickness of the LaAlO3 layer, the conductivity follows a sigma_0 ~(n - n_c)/n_c characteristic. The metal-insulator transition is found to be distinct from that of the semiconductor 2D systems.
Comments: 4 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1009.0709 [cond-mat.mtrl-sci]
  (or arXiv:1009.0709v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1009.0709
Related DOI: https://doi.org/10.1103/PhysRevB.83.075402

Submission history

From: Thilo Kopp [view email]
[v1] Fri, 3 Sep 2010 16:06:42 UTC (1,757 KB)
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