Condensed Matter > Materials Science
[Submitted on 14 Apr 2009]
Title:Stress-driven oxidation chemistry of wet silicon surfaces
View PDFAbstract: The formation of a hydroxylated native oxide layer on Si(001) under wet conditions is studied by means of first principles molecular dynamics simulations. Water molecules are found to adsorb and dissociate on the oxidised surface leading to rupture of Si-O bonds and producing reactive sites for attack by dissolved dioxygen or hydrogen peroxide molecules. Tensile strain is found to enhance the driving force for the dissociative adsorption of water, suggesting that similar reactions could be responsible for environmentally-driven sub-critical crack propagation in silicon.
Submission history
From: Lucio Colombi Ciacchi [view email][v1] Tue, 14 Apr 2009 10:43:04 UTC (2,350 KB)
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