Title:A defect dipole-induced antiferroelectric-like hysteresis loop in a HoMnO3 epitaxial thin film

Abstract: We observed an antiferroelectric-like hysteresis loop in a multiferroic HoMnO3 thin film below the ferroelectric Curie temperature. Using electron paramagnetic resonance and first principles calculations, we attributed this intriguing phenomenon to a defect complex of oxygen vacancy and Fe+1 impurity, which was introduced unintentionally during film growth. Due to the symmetry-conforming principle, the electric dipole of the defect complex would have been aligned in the ferroelectric polarization direction during the film deposition process. This work opens up a route to the exploitation of defect dipoles for the generation of antiferroelectric-like hysteresis in ferroelectric thin films, without the use of artificial structure fabrication or aging processes.