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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:0812.0123 (cond-mat)
[Submitted on 30 Nov 2008 (v1), last revised 24 Feb 2009 (this version, v2)]

Title:On the Possibility of an Electronic-structure Modulation Transistor

Authors:Hassan Raza, Tehseen Z. Raza, Tuo-Hung Hou, Edwin C. kan
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Abstract: We present a novel electronic-structure modulation transistor (EMT), which can possibly be used for post-CMOS logic applications. The device principle is based on the bandwidth modulation of a midgap or near-midgap localized state in the channel by a gate voltage. A single-band tight-binding method coupled with non-equilibrium Green's function formalism for quantum transport is employed to predict the IV characteristics. Our objective is to confirm if an EMT has a self gain and if it can overcome the 2.3kT/decade thermal limit with low supply voltage. The ON current depends on the bandwidth of the state and is limited by the quantum of conductance for a single band. The OFF current is set by the gate leakage and tunneling through the higher bands, which is expected to be small if these bands are a few eV above the energy level of the localized state.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:0812.0123 [cond-mat.mes-hall]
  (or arXiv:0812.0123v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.0812.0123

Submission history

From: Hassan Raza [view email]
[v1] Sun, 30 Nov 2008 05:47:27 UTC (462 KB)
[v2] Tue, 24 Feb 2009 17:32:18 UTC (260 KB)
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